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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520A DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Collector-emitter voltage IN Emitter-base voltage Collector current (DC) HAN C SEM GE Open base OND IC TOR UC VALUE 1500 800 7.5 10 25 6 9 UNIT V V V A A A A W ae ae Open collector Collector current (Pulse) Base current Base current(peak) Collector power dissipation Junction temperature Storage temperature TC=25ae 125 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520A CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter breakdown voltage IC=100mA; IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A VCE=rated; VBE=0 T=125a C VEB=7.5V; IC=0 1.3 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current hFE-1 hFE-2 DC current gain DC current gain mA IC=0.1A ; VCE=5V 6 CC Collector capacitance HAN INC SEM GE IC=6A ; VCE=5V IE=0 VCB=10V;f=1MHz OND IC 5 TOR UC 13 26 7 10 115 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520A SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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